Maskless phase-change lithographic technology is developed as a photoresist of phase-
change materials. The controllable growth behavior of the crystallization region on an …

Three-dimensional finite element method simulation and experimental investigation were
employed to study the fast crystallization mechanism of Ge 2 Sb 2 Te 5 phase-change alloy …

The long term crystallization of amorphous Ge2Sb2Te5 (GST) induced by femtosecond laser
pulses has been numerically and experimentally studied. Simulations of the evolution of …

Nanometer-sized features were fabricated on Ge1Sb2Te4 phase change films uniformly by
irradiation with the fundamental and second harmonic components of a Nd: YAG laser …

The phase transformation dynamics induced in Ge 2 Sb 2 Te 5 films by picosecond laser
pulses were studied using real-time reflectivity measurements with subnanosecond …

Ultra-fast Laser Induced Morphology and Structure of Ge2Sb2Te5 Phase Change Materials
Page 1 OT4A.12.pdf The International Photonics and Optoelectronics Meeting (POEM) © …

ABSTRACT The use of Ge-Sb-Te films for rewritable optical storage is based on the
reversible phase change between their amorphous and crystalline states. Study of the …

We apply a rate equation model in order to simulate the measured change of the reflectance
of an epitaxially grown Ge 2 Te 2 Sb 5 (GST) film during optically induced switching between …

The use of Ge-Sb-Te films for rewritable optical storage is based on the reversible phase
change between their amorphous and crystalline states. Study of the crystallization behavior …

Laser-induced crystallization behaviour in Ge-Sb-Te optical recording thin film materials,
that are sandwiched between dielectric layers, was studied by a multipuise laser technique …