The pump and probe technique in Raman spectroscopy is used to demonstrate the phonon
transport properties of an In 0.05 Ga 0.95 N/GaN heterostructure. The pump laser generates …

The pump and probe technique in Raman spectroscopy of the E 2 (high) mode is exploited
to uncover the enhancing factor of the phonon transport across Ga 1− x In x N/GaN …

Anisotropic heat transport in a Ga 0.84 In 0.16 N/GaN-heterostructure on a sapphire
substrate is observed from microscopic Raman images obtained by utilizing coaxial …

To systematically investigate the effect of GaN interlayers (IL) on electron transport
properties of GaN-based heterostructures, three groups of heterostructures …

An anomalously strong phonon replica is observed in the photoluminescence (PL) spectra
of In 0.23 Ga 0.77 N/GaN multiple quantum well (MQW) samples at 10 K. The Huang-Rhys …

In this study, we analyze the effects of thermal annealing by calculating the optical gain in
the InGaN/GaN quantum well. The interdiffusion of Ga and In atoms across the interface of …

The exciton-phonon coupling has been studied in In x Ga 1− x N/GaN and GaN/Al x Ga 1− x
N multiple quantum wells (MQWs) and compared with that in In x Ga 1− x N and GaN …

Raman scattering from an AlGaN/GaN heterostructure was performed in the temperature
range from 77 to 773 K. The first-and second-order Raman scattering of the A 1 longitudinal …

Thick InxGa1—xN layers were grown by hot wall epitaxy on sapphire substrates without
thick GaN buffer layers, and the E2 phonon mode was clearly observed by a non‐resonant …

Microscopic lattice vibration images of the E2 (high) mode (E2H) and another mode of A1
(LO)(A1L) or the higher energy branch of LO‐phonon− plasmon coupling mode (LOPC+) in …