Amplified spontaneous emission in semiconductor laser amplifiers. Validity of the transmission-line laser model

AJ Lowery - IEE proceedings. Part J, Optoelectronics, 1990 - research.monash.edu
Previously, the transmission line laser model (TLLM) has been used to predict the pulse
response of semiconductor laser amplifiers. This paper shows that it can also be used find …

Equivalent circuit theory of spontaneous emission power in semiconductor laser optical amplifiers

CYJ Chu, H Ghafouri-Shiraz - Journal of lightwave technology, 1994 - ieeexplore.ieee.org
An equivalent circuit model for a semiconductor laser amplifier (SLA) has been developed.
This model can be used with a transfer matrix method (TMM) to analyze the performance of …

[引用][C] Modelling spectral effects of dynamic saturation in semiconductor laser amplifiers using the transmission-line laser model

AJ Lowery - IEE Proceedings J (Optoelectronics), 1989 - IET
Previously, the transmission-line laser model (TLLM) was shown to be a good model for
ultra-short pulse propagation in semicondcutor laser amplifiers under heavy saturation …

Amplified spontaneous emission effects in semiconductor laser amplifiers

WW Chow, RR Craig - IEEE journal of quantum electronics, 1990 - ieeexplore.ieee.org
The analysis presented provides a quantitative method for predicting semiconductor laser
amplifier performance in the presence of ASE (amplified spontaneous emission). It indicates …

Spontaneous emission in semiconductor laser amplifiers

J Arnaud, J Fesquet, F Coste… - IEEE journal of quantum …, 1985 - ieeexplore.ieee.org
In a mode matched configuration, spontaneous emission in semiconductor laser amplifiers
is enhanced by a factor which is larger than unity but which is significantly smaller than the K …

Amplified spontaneous emission and gain characteristics of Fabry-Perot and traveling wave type semiconductor laser amplifiers

L Thylen - IEEE journal of quantum electronics, 1988 - ieeexplore.ieee.org
Semiconductor laser amplifiers are investigated with respect to amplified spontaneous
emission power and gain characteristics. The influence of the spontaneous emission …

Noise characteristics of semiconductor laser amplifiers

T Mukai, Y Yamamoto - Electronics Letters, 1981 - infona.pl
Noise characteristics of Fabry-Perot (FP) cavity type AlGaAs laser amplifiers are studied
theoretically and experimentally. Noise power dependencies on pumping rate and input …

Effects of gain saturation in semiconductor laser amplifier links

L Gillner, L Thylén - IEEE photonics technology letters, 1992 - ieeexplore.ieee.org
The effects of gain saturation due to amplified spontaneous emission in systems comprising
cascaded semiconductor laser amplifiers and attenuators are investigated. The influence of …

Effects of amplified spontaneous emission on gain recovery dynamics of semiconductor optical amplifiers

I Valiente, L Lablonde, JC Simon… - Optical Amplifiers and Their …, 1996 - opg.optica.org
Modeling and experimental studies conceming the effect of amplified spontaneous emission
on gain recovery dynamics of semiconductor optical amplifiers are reported. model [2], but …

Asymmetric frequency response of semiconductor laser amplifiers

T Nakai, R Ito, N Ogasawara - Japanese Journal of Applied …, 1982 - iopscience.iop.org
Asymmetry in the frequency response of semiconductor laser amplifiers operating just below
lasing threshold is investigated experimentally and theoretically. Frequency response of the …