Waveguide-based Photodetector integrated with Semiconductor Optical Amplifier
PW Huang, RY Chen, ST Huang, YK Guo… - CLEO: Applications …, 2022 - opg.optica.org
Waveguide-based Photodetector integrated with Semiconductor Optical Amplifier Page 1
Waveguide-based Photodetector integrated with Semiconductor Optical Amplifier Po-Wei …
Waveguide-based Photodetector integrated with Semiconductor Optical Amplifier Po-Wei …
High saturation power and high gain integrated photoreceivers
A Tauke-Pedretti, M Dummer, JS Barton… - IEEE Photonics …, 2005 - ieeexplore.ieee.org
A novel monolithically integrated semiconductor optical amplifier (SOA) receiver is
presented. This receiver implements a flared SOA and tapered quantum-well detector. SOAs …
presented. This receiver implements a flared SOA and tapered quantum-well detector. SOAs …
A high-efficiency waveguide photodiode for 40-Gb/s optical receivers
T TAKEUCHI, T NAKATA, K FUKUCHI… - IEICE transactions on …, 1999 - search.ieice.org
Waveguide photodiodes (WGPDs) are key devices for high-speed optical receivers in trunk
lines because of their potential ability to provide both high efficiency and a high-speed …
lines because of their potential ability to provide both high efficiency and a high-speed …
Fabrication of an electro-absorption transceiver with a monolithically integrated optical amplifier for fiber transmission of 40–60 GHz radio signals
AZ Zhang, Q Wang, S Karlsson, O Kjebon… - Semiconductor …, 2010 - iopscience.iop.org
We report on the fabrication of a monolithically integrated semiconductor optical amplifier
(SOA) and a reflective electro-absorption transceiver (EAT) for 40–60 GHz radio-over-fiber …
(SOA) and a reflective electro-absorption transceiver (EAT) for 40–60 GHz radio-over-fiber …
Polarization-Independent Photodetector with Integrated Optical Preamplifier and 60 GHz 3 dB Bandwidth
An InP-based photodetector monolithically integrated with a semiconductor optical amplifier
is presented. The chip operates in the O-band and is polarization-independent. Eye pattern …
is presented. The chip operates in the O-band and is polarization-independent. Eye pattern …
Monolithic integration of a semiconductor optical amplifier and a high-speed photodiode with low polarization dependence loss
C Caillaud, G Glastre, F Lelarge… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
We demonstrate the monolithic integration of a buried heterostructure semiconductor optical
amplifier (SOA) and a deep ridge PIN photodiode for high-speed on-off keying links at 1.55 …
amplifier (SOA) and a deep ridge PIN photodiode for high-speed on-off keying links at 1.55 …
80-Gb/s InP-based waveguide-integrated photoreceiver
A waveguide-integrated photoreceiver, comprising a waveguide-integrated photodiode and
a distributed amplifier, is presented. Its optical to electrical conversion capability for …
a distributed amplifier, is presented. Its optical to electrical conversion capability for …
[PDF][PDF] Design and measurement of a reversely biased SOA as high-speed photodetector
M Nikoufard, JH den Besten… - Proc. IEEE/LEOS …, 2004 - researchgate.net
A reversely biased Semiconductor Optical Amplifier (SOA) structure is investigated for its use
as a high-speed waveguide pin-photodetector (WGPD). The layer stack of the WGPD is …
as a high-speed waveguide pin-photodetector (WGPD). The layer stack of the WGPD is …
Design and fabrication of a photonic integrated circuit comprising a semi-conductor optical amplifier and a high speed photodiode (SOA-UTC) for> 100 Gbit/s …
M Anagnosti - 2015 - theses.fr
Résumé Ce travail porte sur la conception, la fabrication et la caractérisation d'une
photodiode très haut débit (UTC PD) et son intégration avec un préamplificateur optique à …
photodiode très haut débit (UTC PD) et son intégration avec un préamplificateur optique à …
Slab-coupled optical waveguide photodiode
SM Madison, JJ Plant, DC Oakley… - Conference on Lasers …, 2008 - opg.optica.org
We report the first high-current photodiode based on the slab-coupled optical waveguide
concept. The device has a large mode (5.8× 7.6 μm) and ultra-low optical confinement (Γ …
concept. The device has a large mode (5.8× 7.6 μm) and ultra-low optical confinement (Γ …