Multi-junction solar cells based on III-V compounds have reached very high power
conversion efficiencies (46%). However, the fabrication methods that are generally used are …

Dilute nitrides lattice-matched to GaP were studied to explore the possibilities to improve
their properties by additional indium or arsenic content in the GaPN alloy for further …

This thesis focuses on optimizing the heterogeneous growth of IIIN-V solar cells on GaP
(001) and GaP nanolayers on Si (001). The goal is to build high efficiency solar cells on low …

In this study, we demonstrated the fabrication and characterization of p-GaAs/i-InGaAsN/n-
GaAs double hetero-junction solar cells (DHJSCs). The intrinsic InGaAsN absorption layer …

Multijunction solar cells with III-V semiconductor sub-junctions have the highest conversion
efficiency of all photovoltaic devices [1]. These devices are applied in concentrated …

We demonstrate for the first time the operation of GaInNAs and GaAs nipi doping solar cells
with ion-implanted selective contacts. Multiple layers of alternate doping are grown by …

Les cellules solaires à multi-jonctions de type III-V possèdent des rendements de
conversion de l'énergie très élevés (46%). Cependant, les méthodes de fabrication …

With only 3% of N and 9% of In, InGaAsN with a band gap of 1.04 eV was obtained and
could be lattice matched to GaAs and Ge. This dilute nitride semiconductor has been …

Solar cells generate green energy directly from sunlight. The energy conversion efficiency of
solar cells depends strongly on materials used as absorbers and the cell architecture …

The use of 1 eV band gap GaInNAs heterostructures is an important step towards the
development of monolithic solar cells with more than three junctions. We report current …