Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …

Optical gain and photoluminescence as well as radiative and Auger losses are calculated
for Ga (AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic …

Photoreflectance (PR) and photoluminescence (PL) spectra of GaAs 1− x Bi x alloys grown
by metalorganic vapor phase epitaxy, for x up to 4.8%, were measured at temperatures …

Localization effects on the optical properties of GaAs 1− x Bi x/GaAs single quantum wells
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …

A set of high quality single quantum well samples of GaAs 1− x Bi x with bismuth
concentrations not exceeding 6% and well widths ranging from 7.5 to 13 nm grown by …

Photoreflectance (PR) and photoreflectance excitation (PRE) techniques are employed to
investigate the optical properties of the GaAs 1-x Bi x (x= 0%–3.7%)/GaAs heterostructure …

In this work, we have investigated the structural and optical properties of GaAs (1− x) Bi
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …

In this work, the electronic bandstructure of GaAs 1− x Bi x/GaAs single quantum well (QW)
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …

The structural and optical properties of a set of high-quality GaAs 1− x Bi x/GaAs quantum
well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied …

The effect of rapid thermal annealing on the optical and structural properties of GaAsBi/GaAs
quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples …