The extraordinary properties of quantum dots (QDs) have been intensively investigated
since the 1990s, with particular emphasis on their wide range of applications to information …

The potential of InAs quantum-dot (QD) photodetectors for room-temperature high-speed
operation at wavelengths near 1.3 μm is evaluated. Specifically, planar metal-semiconductor …

The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …

Mid-and far-infrared detectors operating at elevated temperatures (T> 150K) are critical for
imaging applications. In (Ga) As/GaAs quantum dots, grown by self-organized epitaxy, are …

Infrared (IR) detectors are used in a range of imaging applications, including environmental
monitoring, medical diagnosis, and industrial equipment diagnosis. The typical components …

We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically
grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by …

The performance parameter of quantum dot (QD) devices can be well controlled and
optimized with the variation of dot size. This is inherently due to the size dependent …

Silicon photonics promises scalable manufacturing of integrated photonic devices through
utilization of established CMOS processing techniques and facilities. Unfortunately, the …

We present data and calculations and examine the factors that determine the detectivities in
self-assembled InAs and InGaAs based quantum dot infrared photodetectors (QDIPs). We …

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and
scalability advantages over heterogeneous integration. The challenge is that epitaxial …