Despite several years of studies, the origin of slow-kinetics of charge-carriers at the surface-
states of strong topological insulators remains abstruse. In this article, we report on studies …

We conducted mobility spectrum analysis on a high quality three dimensional topological
insulator film of BiSbTeSe 2 to extract mobility μ and carrier density n. Top and bottom gates …

The topological insulator BiSbTeSe 2 corresponds to a compensated semiconductor in
which strong Coulomb disorder gives rise to the formation of charge puddles, ie, local …

Information processing devices operating in the quantum mechanical regime strongly rely
on the quantum coherence of charge carriers. Studies of electronic dephasing in …

In the thin film limit, the surface state of a three-dimensional topological insulator gives rise
to two parallel conduction channels at the top and bottom surface of the film, which are …

In 3D topological insulators achieving a genuine bulk-insulating state is an important
research topic. Recently, the material system (Bi, Sb) 2 (Te, Se) 3 (BSTS) has been …

The use of three-dimensional topological insulators for disruptive technologies critically
depends on the dissipationless transport of electrons at the surface, because of the …

Electron transport in topological insulators usually involves both topologically protected
surface states and trivial electronic states in the bulk material. The surface transport is …

We report on the Shubnikov–de Haas oscillations in the longitudinal resistance of thin films
of three-dimensional topological insulator Sb 2 Te 3 grown by means of molecular beam …

We present low-temperature magnetotransport measurements characterizing the promising
quaternary Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator material. The measurements …