This paper presents a method for extending millimeter wave power amplifier (PA) linear
range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The …

This paper presents the design of an efficient two-stage m illim eter-wave power amplifier
(PA) using stacked field-effect transistors in 45nm silicon-on-insulator (SOI) CMOS …

This paper presents a millimeter wave power amplifier (PA) implemented in 22nm FD-SOI
technology with only 0.8 V transistors. The single stage pseudo-differential 3-level stacked …

Several broadband medium-power millimeter-wave power amplifiers (mm-Wave PAs) are
designed using GlobalFoundries' 22-nm fully-depleted silicon on insulator (FD-SOI) CMOS …

Recently reported CMOS power amplifier ICs for microwave and millimeter-wave
communication systems such as 5G are summarized and reviewed in this paper. Stacked …

The design of broadband highly-efficient millimeter-wave (mm-Wave) Power Amplifiers (PA)
in 22-nm CMOS FD-SOI (fully depleted silicon-on-insulator) is discussed. One design uses …

This letter presents a feasibility study for a 62-GHz power amplifier (PA) in a 22-nm CMOS
technology with integrated data modulation via the back-gate. The proposed PA consists of …

This letter presents a two-stage mm-wave power amplifier (PA) in 22nm fully depleted silicon-
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …

This paper concerns with the design of multi-stacked CMOS millimeter-wave power
amplifiers suitable for phased array front-end applications using triple-well process. The …

In this paper, we discuss the design and measurement results of a very broadband and
efficient millimeter-wave (mm-Wave) medium-power power amplifier (PA) for potential mm …