Ni2Si, NiSi and NiSi2 contacts were prepared on n-type 4H–and 6H–SiC (0001) by
deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature …

Abstract 4H–SiC Schottky diodes with nickel silicide contacts were formed by consecutive
deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by …

Ni silicides contacts, which are expected to be advantageous contact materials on SiC, were
tested in this work. Prepared contact structures were ohmic with low contact resistivity …

We report the material and electrical properties of CoSi2 and NiSi2 contacts to n-type 4H-
SiC depending on the post-annealing and the metal covering conditions. Ni/Si/Ni and …

Using cross-sectional transmission electron microscopy (TEM), microstructural changes in
Ni contacts on n-type 4H–SiC as a function of annealing temperature were investigated …

In this work the electrical properties of Ni and Ni2Si contacts on n-type 4H-SiC were
correlated to the strong structural changes at the contact/SiC interface upon annealing. We …

Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …

The structure of Ni and Si Ni contacts to SiC was studied by transmission electron
microscopy. Annealed Ni SiC contacts showed ohmic behaviour, but Ni proved to be …

Ni, Ni2Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature
range of 750–1150° C. The annealed contacts were analyzed before and after acid etching …

The properties of Ta–Si contact to n-SiC have been investigated by complementary use of
2MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements …