We present experimental studies on low-temperature (T= 4.2 K) carrier dynamics in (Ga,
In)(Sb, Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi …

The carrier dynamics in type-II GaAsSb/GaAs quantum well (QW) is investigated by time-
resolved photoluminescence at low temperature. A detailed analysis of the experimental …

GaSb based quantum wells (QWs) show promising optical properties in near-infrared
spectral range. In this paper, we present photoluminescence (PL) spectroscopies of In x Ga …

Localization effects on the optical properties of GaAs 1− x Bi x/GaAs single quantum wells
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …

Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum
wells are presented. The PL kinetics are determined by the dynamic band bending effect …

We present the experimental results of time-resolved photoluminescence spectroscopy in
type II GaAs/GaAs 0.64 Sb 0.36 quantum well heterostructures. At moderate optical …

GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using
molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high …

Type-II In (Ga) Sb quantum-confined structures in InAs matrices offer a potential material
system for wavelength flexible, high-efficiency, surface-emitting mid-infrared sources. In this …

We have studied optical properties of staggered band line-up (type-II) heterostructures
based on strained GaSb sheets in a GaAs matrix. The giant valence-band offset …

The modal gain, modal loss and spontaneous emission of a GaAsSb-based type-II quantum-
well (QW) laser structure emitting at 1.3 mum have been experimentally determined as a …