We propose a polarized, angle-resolved spectral (PARS) reflectometry for simultaneous
thickness and refractive-index measurement of ultra-thin films in real time. This technology …

In this Letter, we describe a new, to the best of our knowledge, concept of angle-resolved
spectral reflectometry with a pixelated polarizing camera for determination of the thickness of …

Spectroscopic ellipsometry is a potent method that is widely adopted for the measurement of
thin film thickness and refractive index. Most conventional ellipsometers utilize mechanically …

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the
thickness is less than about 10 nm [1, 2]. We discovered an interesting exception to this …

Ellipsometric measurement of transparent samples suffers from substrate backside reflection
challenges, including incoherent and partial superposition issues. The recently developed …

Spectroscopic reflectometry has been a mainstay of optical semiconductor metrology for
many years, as has single wavelength ellipsometry performed at a fixed angle of incidence …

The simultaneous determination of t, n (λ), and κ (λ) of thin films can be a tough task for the
high correlation of fit parameters. The strong assumptions about the type of dispersion …

Spectroscopic ellipsometry is a widely used optical technique in both industry and research
for determining the optical properties and thickness of thin films. The effective use of …

Visible-near-IR spectrophotometry was combined with single-wavelength beam profile
reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The …

Measuring film thickness on transparent substrate is crucial and universal for semiconductor
chips. This paper proposes an orthogonal polarization common-path film thickness …