At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …

The band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy
semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the …

Absorption bands due to intervalence band transitions have been observed in p-type AISb
and GaAs. In GaAs, three bands at 0· 42 eV, 0· 31 eV, and 0· 15 eV are identified as …

Using first-principles all-electron band structure method, we have systematically calculated
the natural band offsets ΔEv between all II–VI and separately between III–V semiconductor …

BACKGROUND In the past two decades, quaternary alloys of III–V semiconductors have
been the subject of extensive theoretical and experimental research. Technologically, such …

Electronic band-structure calculations are performed for zinc-blende III–V (AlP, AlAs, AlSb,
GaP, GaAs, GaP, InP, InAs, and InSb) and II–VI (ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe) …

A predictive model for band-gap narrowing has been applied to several III-V
semiconductors. Band-gap narrowing is expressed as ΔE g= AN 1/3+ BN 1/4+ CN 1/2; …

Estimates of valence-band and conduction-band offsets for lattice-matched and
pseudomorphic strained heterostructures of six technologically important III-V quaternary …