Photoreflectance (PR) measurements have been performed on In As∕ In 0.53 Ga 0.23 Al
0.24 As quantum dashes (QDashes) molecular-beam epitaxy grown on InP substrate. The …

Photoreflectance (PR) measurements were performed on molecular-beam-epitaxy-grown
self-assembled InAs quantum dashes (QDashes) embedded in an In 0.53 Ga 0.47 As∕ In …

Photoluminescence and photoreflectance measurements have been performed to
investigate molecular-beam-epitaxy-grown InAs/InGaAlAs/InP structures with different-size …

Carrier confinement in InAs quantum dashes QDas grown on InP001 is investigated both
experimentally and theoretically. The aim of these studies is to reconstruct the electronic …

We report on a photoreflectance investigation in the 0.8-1.5 eV photon energy range and at
temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots …

Photoreflectance (PR) modulation spectroscopy, supported by photoluminescence (PL) and
atomic force microscopy, was applied to the study of the optical properties of In As∕ Ga As …

Exciton spin and related optical polarization in self-assembled InAs/In 0.53 Ga 0.23 Al 0.24
As/InP (001) quantum dashes emitting at 1.55 μm are investigated by means of polarization …

Molecular beam epitaxy grown InAs/InGaAlAs/InP quantum dashes designed for the 1.5 μ m
range were investigated by microphotoluminescence spectroscopy. The exciton and …

We describe optical and structure characteristics of InAs quantum dashes grown on a GaAs
substrate using an AlGaAsSb metamorphic buffer. The metamorphic buffer increases the …

We report on photoreflectance investigations of strained-layer In _0.2 Ga _0.8 As/GaAs/Al
_0.3 Ga _0.7 As single quantum well laser structures grown by molecular beam epitaxy. All …