The orthorhombic phase of GeSe, a structural analogue of layered SnSe (space group:
Pnma), has recently attracted attention after a theoretical prediction of high thermoelectric …

GeSe is a IV–VI semiconductor, like the excellent thermoelectric materials PbTe and SnSe.
Orthorhombic GeSe has been predicted theoretically to have good thermoelectric …

Orthorhombic GeSe is a promising thermoelectric material. However, large band gap and
strong covalent bonding result in a low thermoelectric figure of merit, zT≈ 0.2. Here, we …

Rhombohedral GeTe can be approximated as the directional distortion of the cubic GeTe
along [111]. Such a symmetry-breaking of the crystal structure results in an opposite …

The realization of n‐type Ge chalcogenides is elusive owing to intrinsic Ge vacancies that
make them p‐type semiconductors. GeSe crystallizes into a layered orthorhombic structure …

High thermoelectric performance of a crystalline solid requires it to have low thermal
conductivity which is one of the utmost material challenges. Herein, we demonstrate how the …

The recently reported superior thermoelectric performance of SnSe, motivates the current
work on the thermoelectric properties of polycrystalline GeSe, an analog compound with the …

GeTe and its derivatives constituting Pb-free elements have been well known as potential
thermoelectric materials for the last five decades, which offer paramount technological …

High symmetry favors high power factor by virtue of the balanced Seebeck coefficient and
carrier mobility, nonetheless, the role of crystal symmetry in enhancing the material's …

Successful applications of a thermoelectric material require simultaneous development of
compatible n-and p-type counterparts. While the thermoelectric performance of p-type GeTe …