The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …

The theory of Raman scattering by the coupled electron-phonon system in metals and
heavily doped semiconductors is developed with Coulomb screening and the electron …

The Raman tensor (transition susceptibility) contains two basic pieces of information: the
dipole matrix elements and density of states of electronic interband transitions and the …

Inelastic light scattering by the carriers interacting with phonons in the anisotropic metals
with large penetration depth is theoretically studied. It is shown that the strong temperature …

The interaction of phonon states with the point, line, and plane defects is considered near
the edge of an optical-phonon branch. Because the effect of disorder on optical phonons is …

The theoretical concepts of Raman scattering by free current carriers in semiconductors and
metals are reviewed. Various elementary excitations are discussed as the sources of the …

In n-InP and n-GaAs the Raman scattering spectra from plasmon-phonon modes (PPM) with
wave vector q⋍ 10 6 cm-1 have been measured. The frequencies of PPM thus obtained are …

Raman scattering from free carriers in semiconductors is discussed. Different mechanisms of
light scattering are considered on the basis of the integrated cross section analysis. The …

The interaction of photons with solids comprises ionic and electronic oscillations; this
chapter focuses on lattice vibrations. The dielectric polarization is related to the atomic …

A formalism for the calculation of the scattering rate in wurtzite-type crystals and quantum
wells (QW's) is developed taking into account features of the optical phonon spectra in an …