Machine learning regression-based single-event transient modeling method for circuit-level simulation
C Xu, Y Liu, X Liao, J Cheng… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, a novel machine learning regression-based single-event transient (SET)
modeling method is proposed. The proposed method can obtain a reasonable and accurate …
modeling method is proposed. The proposed method can obtain a reasonable and accurate …
Machine Learning-based model for Single Event Upset Current Prediction in 14nm FinFETs
This work presents a machine learning regression-based surrogate model of Single Event
Upset (SEU) transient current for circuit-level simulation. The phenomenal success of …
Upset (SEU) transient current for circuit-level simulation. The phenomenal success of …
An analytical model of single-event transients in double-gate MOSFET for circuit simulation
In this paper, a physics-based bias-dependent model of single-event transients (SETs) in
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …
Hybrid data-driven modeling methodology for fast and accurate transient simulation of SiC MOSFETs
To enable fast and accurate models of SiC MOSFETs for transient simulation, a hybrid data-
driven modeling methodology of SiC MOSFETs is proposed. Unlike conventional modeling …
driven modeling methodology of SiC MOSFETs is proposed. Unlike conventional modeling …
A physics-based single event transient pulse width model for CMOS VLSI circuits
The single-event transients in MOSFETs due to heavy ion strikes introduce soft errors in sub-
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …
Accurate modeling of single-event transients in a SiGe voltage reference circuit
KA Moen, L Najafizadeh, J Seungwoo… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
Single-event transients (SETs) are modeled in a SiGe voltage reference using compact
model and full 3-D mixed-mode TCAD simulations. The effect of bias dependence and …
model and full 3-D mixed-mode TCAD simulations. The effect of bias dependence and …
Real-time simulation of power electronic systems based on predictive behavior
The field-programmable gate array (FPGA) based hardware-in-the-loop (HiL) test, which
minimizes the time-step of the real-time simulation below 500 ns, is an enabling technology …
minimizes the time-step of the real-time simulation below 500 ns, is an enabling technology …
Discrete state event-driven framework with a flexible adaptive algorithm for simulation of power electronic systems
Accurate and efficient simulation of power electronic systems is challenging due to their
hybrid nature consisting of continuous states and discrete events. In this paper, a …
hybrid nature consisting of continuous states and discrete events. In this paper, a …
Modeling the dependence of single-event transients on strike location for circuit-level simulation
L Ding, W Chen, T Wang, R Chen, Y Luo… - … on Nuclear Science, 2019 - ieeexplore.ieee.org
The dependence of single-event transients on strike location is studied and integrated into
the bias-dependent single-event model for circuit simulation. Two nondimensional …
the bias-dependent single-event model for circuit simulation. Two nondimensional …
Electromagnetic transient modeling and simulation of power converters based on a piecewise generalized state space averaging method
L Wang, X Deng, P Han, X Qi, X Wu, M Li, H Xu - IEEE Access, 2019 - ieeexplore.ieee.org
Large-scale photovoltaic (PV) power plants connected to the grid leads to the complex
calculations in modeling and simulation of the power system, especially in the …
calculations in modeling and simulation of the power system, especially in the …