Molecular dynamics simulations of low-energy (5–100 eV) Cl+ and Cl 2+ bombardment on
(100) Si surfaces are performed to investigate the impact of plasma dissociation and very …

Ultrathin layered films in new transistors architectures (FinFET and fully depleted SOI)
require damage-free plasma etching techniques with unprecedented selectivity between …

Classical molecular dynamics (MD) simulations have been performed for SiCl x+(x= 0–4)
ions incident on Si (100) surfaces, using an improved Stillinger–Weber (SW) potential form …

Classical molecular dynamics (MD) simulations have been performed for Cl+ and Br+ ions
incident on Si (100) surfaces with Cl and Br neutrals, respectively, to gain a better …

Molecular dynamics simulations of Si etching using chlorine-based plasmas including both
high-energy (= 100 eV) Cl+ ions and low-energy neutral Cl radicals with a high neutral-to …

Molecular dynamics simulations using improved Tersoff–Brenner potential parameters were
performed to investigate Cl+ etching of a {2× 1} reconstructed Si (100) surface. Steady-state …

For low-pressure, high-density plasma systems, etch products can play a significant role in
affecting plasma parameters such as species concentration and electron temperature. The …

We have used laser‐induced thermal desorption, combined with laser‐induced
fluorescence of SiCl (g) to study, in real time, the Si‐chloride (SiCl x (ads)) layer that is …

Molecular dynamics (MD) simulations were conducted of impact (normal incidence; 10, 25
and 50 eV) onto an initially pure Si surface until approximately steady state Cl coverages …

We report results from molecular‐dynamics simulations of F+ and Cl+ impact of silicon
surfaces, at normal incidence and over a range of energies (10, 25, and 50 eV). The …