GaAs 1− x Bi x/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer
mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has …

A series of GaAsBi/GaAs multiple quantum well p–i–n diodes were grown by molecular
beam epitaxy. Nomarski images showed evidence of sub-surface damage in each diode …

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the
properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High …

The structural and optical properties of multiquantum‐well (MQW) structures grown by
molecular beam epitaxy are strongly dependent on the substrate temperature T s during the …

GaAsBi/GaAs double quantum wells and double quantum well separate confinement
heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of …

Abstract We report a GaAs 0.96 Bi 0.04/GaAs multiple quantum well (MQW) light emitting
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …

Single‐and multi‐quantum well (QW) structures of Ga (AsBi)/GaAs with up to 10% Bi were
grown by molecular beam epitaxy (MBE) at 300–330° C substrate temperature. The …

The effect of rapid thermal annealing on the optical and structural properties of GaAsBi/GaAs
quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples …

GaAsBi/GaAs multiple quantum well (MQW) p–i–n diodes are grown by molecular beam
epitaxy. Transmission electron microscope images of the diodes show good agreement …

High quality GaAs/Al x Ga1− x As single and multiquantum well heterostructures were grown
for the first time by chemical beam epitaxy. Studies using low‐temperature …