Photorefractive and free-carrier nonlinearities in GaAs transfer energy from a strong
picosecond pump, which is linearly polarized at an arbitrary angle to a weak s-polarized …

Sensitive and low power generation of phase conjugate beams in the near IR became
possible after the discovery of the photorefractive effect in GaAs and other compound …

Abstract Recently, the 1.06-μm photorefractive response of semi-insulating GaAs and InP
has been measured. 1, 2 Preliminary experiments have now been performed using the …

We report the first observation to our knowledge of the photorefractive effect on picosecond
time scales. Photorefractive beam coupling in GaAs with picosecond, 1.06-μm pulses is …

Spatial light modulation by beam coupling in GaAs crystals clickable element to expand a topic
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This paper reports on self-pumped photorefractive phase conjugation using repetitively
pulsed high intensity (MW cm− 2) pulses of nanosecond duration. An intensity-dependent …

It has been demonstratedI-4 that GaAs is a sensitive photorefractive material with the
potential to be used for optical processing in the infrared region. The advantages of using …

We demonstrate wavelength conversion based on nonlinear polarization rotation driven by
ultrafast carrier relaxation in an InGaAsP-InGaAs multi-quantum-well (MQW) semiconductor …

We report observation of a rotation in the polarization of the two photorefractive recording
beams in GaAs for a configuration with the internally generated space‐charge field along …

We demonstrate wavelength conversion based on nonlinear polarization rotation driven by
ultrafast carrier relaxation in an InGaAsP-InGaAs multiquantum-well semiconductor optical …