Raman-scattering study of the InGaN alloy over the whole composition range
We present Raman-scattering measurements on In x Ga 1− x N over the entire composition
range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a …
range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a …
Raman Scattering Spectroscopy and Analyses of III-V Nitride-Based Materials
This paper reviews Raman studies of GaN, A1N, InN, and the alloy systems Ga x Al 1–x N
and In x Ga 1–x N. The review focuses on the applications of Raman spectroscopy to …
and In x Ga 1–x N. The review focuses on the applications of Raman spectroscopy to …
Multiphonon resonance Raman scattering in
JW Ager III, W Walukiewicz, W Shan, KM Yu, SX Li… - Physical Review B …, 2005 - APS
In In x Ga 1− x N epitaxial films with 0.37< x< 1 and free electron concentrations in the 10 18
cm− 3 range, strong resonant Raman scattering of the A 1 (LO) phonon is observed for laser …
cm− 3 range, strong resonant Raman scattering of the A 1 (LO) phonon is observed for laser …
Evidence for compositional inhomogeneity in low In content (InGa) N obtained by resonant Raman scattering
D Behr, J Wagner, A Ramakrishnan, H Obloh… - Applied physics …, 1998 - pubs.aip.org
Resonant Raman scattering has been used to study hexagonal In x Ga 1− x N films with x≈
0.1, grown by metal–organic chemical vapor deposition on sapphire substrates. To vary the …
0.1, grown by metal–organic chemical vapor deposition on sapphire substrates. To vary the …
Raman studies of nitrogen incorporation in
T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu… - Applied physics …, 1998 - pubs.aip.org
We report direct-backscattering Raman studies of GaAs 1− x N x alloys, for x⩽ 0.03, grown
on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like …
on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like …
Properties of GaN and related compounds studied by means of Raman scattering
H Harima - Journal of Physics: Condensed Matter, 2002 - iopscience.iop.org
In the last decade, we have seen very rapid and significant developments in Raman
scattering experiments on GaN and related nitride compounds: the Γ-point phonon …
scattering experiments on GaN and related nitride compounds: the Γ-point phonon …
Resonant Raman scattering in strained and relaxed InGaN∕ GaN multi-quantum wells
S Lazić, M Moreno, JM Calleja, A Trampert… - Applied Physics …, 2005 - pubs.aip.org
The effects of the composition and strain in InGaN∕ GaN multi-quantum wells on their
phonon frequencies have been determined using resonant Raman scattering in a wide …
phonon frequencies have been determined using resonant Raman scattering in a wide …
Dielectric function and bowing parameters of InGaN alloys
E Sakalauskas, Ö Tuna, A Kraus… - … status solidi (b), 2012 - Wiley Online Library
Abstract Ga‐rich (0001)‐oriented InxGa1− xN alloys grown by molecular beam epitaxy or
metal‐organic vapour phase epitaxy on GaN/sapphire templates were investigated by …
metal‐organic vapour phase epitaxy on GaN/sapphire templates were investigated by …
Lattice dynamics in GaN and AlN probed with first‐and second‐order Raman spectroscopy
U Haboeck, H Siegle, A Hoffmann… - physica status solidi …, 2003 - Wiley Online Library
We present a selection of our contributions to basic research on the lattice dynamical
properties of group‐III nitrides and their alloys. We used first‐order Raman scattering to …
properties of group‐III nitrides and their alloys. We used first‐order Raman scattering to …
Ultraviolet Raman study of and phonons in alloys
We report on ultraviolet Raman spectroscopy of In x Ga 1− x N thin films grown on sapphire
by metal-organic chemical vapor deposition. The A 1 (LO) and E 2 phonon mode behavior …
by metal-organic chemical vapor deposition. The A 1 (LO) and E 2 phonon mode behavior …