(57) ABSTRACT A novel germanium (Ge) photodetector is disclosed, contain ing a stripe
layer including Ge, a Substrate Supporting the stripe layer, and P and N regions, which are …

51) Int. Cl. orming a Second 1nSulator layer on the Gelayer, pattern1n (51) forming d
insulator lay he Gelayer, p ing HOIL 2L/00(2006.01) the Gelayer, forming a capping insulator …

(62) Division of application No. 13/556,597, filed on Jul. Vazken Alexanian 24, 2012, which
is a division of application No. 13/024,724, filed on Feb. 10, 2011.(57) ABSTRACT (60) …

(57) ABSTRACT A method of fabricating a germanium photo detector includes preparing a
silicon Substrate wafer and depositing and planarizing a silicon oxide layer on the silicon …

(57) ABSTRACT A high-efficiency bandwidth product germanium photode tector includes a
silicon substrate having an opening-down three-sided groove formed by etching; a metallic …

(57) ABSTRACT A method of fabricating a germanium photo detector includes preparing a
silicon Substrate; depositing and pla narizing a silicon oxide layer, forming contact holes in …

-Y-Perform N-type doping forming a capping insulator layer on the second insulator layer
and a portion of the first insulator layer, heating the device to crystallize the Gelayer resulting …

Correspondence Address: A germanium-based photodetector comprises a p-(or KNOBBE,
MARTENS, OLSEN & BEAR LLP n-type) germanium layer, an intrinsic single crystal germa …

The present invention provides a photodetector with a ger manium epitaxial layer and a
method of fabricating the same. In Some embodiments of the present invention, methods of …

US20140175510A1 - Germanium photodetector and method of fabricating the same - Google
Patents US20140175510A1 - Germanium photodetector and method of fabricating the same …