Reliability Assessment of GaAs/Al₂O₃ Junctionless FinFET in the Presence of Interfacial Layer Defects and Radiations
This research work reports reliability assessment of junctionless (JL) FinFET in the presence
of interfacial trap charges and radiations. The degradation in performance of JL FinFET is …
of interfacial trap charges and radiations. The degradation in performance of JL FinFET is …
Influence of GaN/ZrO2 interfacial layer defects on 8-nm GaN-SOI-FinFET for reliable RFIC design
This work presents, the reliability of GaN/ZrO 2 (Gallium Nitride/Zirconium dioxide) interfacial
layer defects on 8-nm Gallium Nitride (GaN) Silicon-on-Insulator (SOI) FinFET (GaN-SOI …
layer defects on 8-nm Gallium Nitride (GaN) Silicon-on-Insulator (SOI) FinFET (GaN-SOI …
Designing and Reliability analysis of radiation hardened Stacked gate Junctionless FinFET and CMOS Inverter
Along with radiation sensing, necessity to study and design reliable radiation hardened
devices is also increasing now-a-days. These devices are tolerant to high dosage of …
devices is also increasing now-a-days. These devices are tolerant to high dosage of …
Memoryless nonlinearity in IT JL FinFET with spacer technology: Investigation towards reliability
This work investigates the reliability assessment of high-k spacer and the effect of
temperature on the device analog/RF performance for Inverted 'T'(IT) Junctionless (JL) …
temperature on the device analog/RF performance for Inverted 'T'(IT) Junctionless (JL) …
Heavy-ion irradiation study in SOI-based and bulk-based junctionless FinFETs using 3D-TCAD simulation
N Vinodhkumar, YV Bhuvaneshwari… - Microelectronics …, 2015 - Elsevier
In this paper, SOI-based and bulk-based junctionless FinFETs subjected to heavy–ion
irradiation are scrutinized using 3D-TCAD simulation. Since the junctionless devices need …
irradiation are scrutinized using 3D-TCAD simulation. Since the junctionless devices need …
A proposed DG-FinFET based SRAM cell design with RadHard capabilities
The radiation induced soft errors have become one of the most important and challenging
failure mechanisms in modern electronic devices. This paper proposes a new circuit level …
failure mechanisms in modern electronic devices. This paper proposes a new circuit level …
Interfacial charge analysis of heterogeneous gate dielectric-gate all around-tunnel FET for improved device reliability
In this paper, we have investigated device reliability by studying the impact of interface traps,
both donor (positive interface charges) and acceptor (negative interface charges), present at …
both donor (positive interface charges) and acceptor (negative interface charges), present at …
FinFET reliability study by forward gated-diode generation–recombination current
Reliability of FinFETs is studied in this paper using the forward gated-diode generation–
recombination (G–R) current. The current–voltage characteristics of a FinFET are measured …
recombination (G–R) current. The current–voltage characteristics of a FinFET are measured …
Temperature associated reliability issues of heterogeneous gate dielectric—gate all around—tunnel FET
In this paper, the temperature associated reliability issues of heterogeneous gate dielectric-
gate all around-tunnel FET (HD GAA TFET) has been addressed, and the results are …
gate all around-tunnel FET (HD GAA TFET) has been addressed, and the results are …
Reliability and Power Analysis of FinFET Based SRAM
A Navaneetha, K Bikshalu - Silicon, 2022 - Springer
Demand for accommodating more and new functionalities within a single chip such as SOC
needs novel devices and architecture such as FinFET devices instead of MOSFET. FinFET …
needs novel devices and architecture such as FinFET devices instead of MOSFET. FinFET …