Gallium nitride high electron mobility transistor has been seen as a power semiconductor
devices with lots of potential since it has been commercialized. However, the advantages of …

The gallium nitride high electron mobility transistors (GaN-HEMTs) are increasingly applied
for high-power switching converters. However, their fast switching in high-power …

This paper presents an accurate analytical model to calculate the power loss of a high
voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode …

The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a
potential power semiconductor device for high switching speed and high power density …

An analytical model is proposed in this paper to calculate the switching loss of low voltage
enhancement mode Gallium Nitride high electron mobility transistors (eGaN HEMTs). The …

Recently, a major challenge in the adoption of wide bandgap semiconductors for power
electronic applications is the need to trade device performance for device safety. In this …

This paper proposes an improved analytical switching process model to calculate the
switching loss of low-voltage enhancement-mode Gallium Nitride high-electron mobility …

To assess GaN power transistors' capability to maintain a decent enhancement-mode
operation under high voltage switching operation, the impact of negative threshold voltage …

This paper presents the development of a simulation model for high-voltage gallium nitride
(GaN) high-electron-mobility transistors (HEMT) in a cascode structure. A method is …

Low-voltage enhancement-mode gallium nitride high electron mobility transistors (eGaN
HEMTs) are a kind of promising devices to realize high-efficiency and high-power-density …