In this article, the performance and design considerations of the planar structure of
germanium on silicon avalanche photodiodes are presented. The dependences of the …

Ge/Si separate absorption, charge and multiplication avalanche photodiodes are
investigated. The influence of the absorption thickness and doping, along with the charge …

We report the demonstration of a Ge 0.95 Sn 0.05 on silicon (Ge 0.95 Sn 0.05/Si) avalanche
photodiode (APD) having a separate-absorption-charge-multiplication structure, wherein a …

In this paper, effects of alloy composition (x or y) on gain and bandwidth of Si/Si 1− x Ge x
and Si/Ge 1− y Sn y heterostructure avalanche photodiodes (APDs) have been investigated …

We report the first demonstration of a Ge 0.9 Sn 0.1 multiple quantum wells on Si avalanche
photodiode (Ge 0.9 Sn 0.1 MQW/Si APD), achieving a cutoff wavelength λ above 2 μm. This …

The influence of interface donor and acceptor traps on the static and dynamic behavior of
Ge/Si separate absorption, charge, and multiplication avalanche photodiodes (APDs) is …

Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid
melting growth technique for separate absorption and multiplication (SAM) avalanche …

The effects of surface defects at the sidewall of absorption and multiplication layers on the
sidewall leakage current in separate-absorption-charge-multiplication Ge/Si avalanche …

In this communication, the potentiality of InSb material as an avalanche photodiode (APD)
device is investigated. Current density-voltage (JV) characteristics at 77K of InSb pin …

A new approach to determine the multiplication gain at punch-through for an avalanche
photodiode with separate absorption and multiplication regions from excess noise …