We present an overview of our optical characterization work on dilute nitride quantum well
(QW) samples. A simple model for calculating interband transition energies is constructed …

The authors report the temperature dependent photoluminescence characteristics of a
series of Ga In N As Sb∕ Ga (N) As double quantum wells which all emit at 1.5–1.55 μ m at …

We have investigated the temperature dependence of photoluminescence (PL) emission
from sequentially grown Ga0. 8In0. 2As and Ga0. 8In0. 2N0. 015As0. 985 quantum wells …

We derive an analytical model to describe the conduction-band states of GaNAs-based
quantum well structures, including the band anticrossing effect between N resonant states …

Recombination processes in Ga 1− x In x N y As 1− y/GaAs multiple quantum wells (MQWs)
were investigated as function of the nitrogen molar fraction. We found a pronounced S …

We have investigated by photoluminescence spectroscopy and x-ray diffraction the
influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga …

The band structure and optical gain have been calculated for GaInNAs/GaAs quantum wells
(QWs) with various nitrogen concentrations within the 10-band and 8-band kp models. Two …

The effect of growth temperature on the optical properties of GaAs/GaN x As 1− x quantum
wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in …

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have
been investigated by picosecond time-resolved photoluminescence (PL) measurements …

We report on the nitrogen-concentration dependence of optical transitions between
quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low …