This paper reports the design of a 5GHz WiFi power amplifier (PA) taking advantage of the
FD-SOI technology. Fabricated in a 28nm UTBB FD-SOI process with 1.8-V thick oxide …

To demonstrate the capacity of Fully-Depleted Silicon-On-Insulator (FDSOI) technology, this
paper presents two radio frequency designs taking benefit of the key advantages of the …

In this work 1 we present the design of a fully integrated wideband high efficiency power
amplifier for 5G applications. The amplifier consists of two single ended common source …

High-voltage RF active and passive devices, including LDMOS, fringe capacitors,
transformers and inductors with good RF performance, are required for building integrated …

A 2-stage 24 to 28 GHz reconfigurable CMOS power amplifier (PA) is designed in a 22nm
fully-depleted silicon-on-insulator (FD-SOI) technology. The differential PA uses stacked …

This letter presents a feasibility study for a 62-GHz power amplifier (PA) in a 22-nm CMOS
technology with integrated data modulation via the back-gate. The proposed PA consists of …

This paper presents the design of an 18 GHz power amplifier (PA) in GlobalFoundries' 22
nm fully-depleted silicon on insulator (FD-SOI) technology. The PA features a single-ended …

This paper presents a 25 W Silicon LDMOS 2 stage RF integrated circuit (IC) designed for
WiMAX at 3.5 GHz. This IC is capable of handling the full 3.3 to 3.8 GHz band with flat RF …

A fully integrated and packaged Power Amplifier (PA) has been realized in 130nm
STMicroelectronics H9SOIFEM. The PA is based on a new dedicated power cell delivering …

This paper presents a differential Power Amplifier (PA) for operation in the D-band. The
simulated PA has gain of 8 dB/stage at 160 GHz for a total gain of 32 dB, a saturated output …