The fabrication of high aspect ratio Si trenches has been becoming difficult due to the
decrease in critical dimension (CD) to deep nanoscale. Especially, aspect ratio dependent …

The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide
(SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti …

This study presents the features of profile evolution in deep trench silicon etching, which is
crucial for commercial wafer-processing applications. Experiments to minimize the …

Simultaneous micro-and nanoscale etching of silicon on a wafer-scale is nowadays
performed using plasma etching techniques. These plasma techniques, however, suffer from …

As the process complexity has been increased to overcome challenges in plasma etching,
individual control of internal plasma parameters for process optimization has attracted …

This study empirically investigates the influences of several parameters on surface
morphology and etch rate in a high-aspect-ratio silicon etching process. Two function …

During deep reactive ion etching (DRIE), microscale etch masks with small opening such as
trenches or holes suffer from limited aspect ratio because diffusion of reactive ions and free …

In this study, we developed a method to qualify the plasma etching result in high-aspect-ratio
trench with ion tilting using the natural sheath curvature at the wafer edge. Etching was …

The etch characteristics of Si and TiO 2 nanostructures for optical devices were investigated
using pulse biased inductively coupled plasmas (ICP) with SF 6/C 4 F 8/Ar and BCl 3/Ar …