InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …

Indium nitride (InN) is one of the promising narrow band gap semiconductors for utilizing
solar energy in photoelectrochemical (PEC) water splitting. However, its widespread …

In this work, we have successfully grown InGaN nanowires by catalyst-assisted chemical
vapour deposition technique with high aspect ratio for solar-driven water splitting …

Manifold morphologies of GaN nanowires (NWs) were fabricated using halide chemical
vapour deposition (HCVD) on an n-Si (111) substrate and demonstrated to be a promising …

Indium nitride (InN) is a promising photoelectrode material for photoelectrochemical (PEC)
water splitting due to its strong light absorption capability, excellent electron mobility and …

Nanodevices using individual indium nitride nanowires are fabricated by e-beam
lithography. The nanowires have diameters of 40–80 nm, lengths up to several tens of …

Ultralong compositional tunable InGaN nanowires as a photoanode, grown by chemical
vapour deposition technique using catalyst-free approach, exhibits high efficiency solar …

Three-dimensional hierarchical nanostructures were synthesized by the halide chemical
vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires …

III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient
solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high …

We have studied the photoelectrochemical properties of both undoped and Si-doped GaN
nanowire arrays in 1 mol l− 1 solutions of hydrogen bromide and potassium bromide, which …