TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)
E Gale - Semiconductor Science and Technology, 2014 - iopscience.iop.org
The memristor is the fundamental nonlinear circuit element, with uses in computing and
computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching …
computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching …
[HTML][HTML] Characterization of electroforming-free titanium dioxide memristors
Abstract Metal–insulator–metal (MIM) structures based on titanium dioxide have
demonstrated reversible and non-volatile resistance-switching behavior and have been …
demonstrated reversible and non-volatile resistance-switching behavior and have been …
Memory Impedance in TiO2 based Metal-Insulator-Metal Devices
Large attention has recently been given to a novel technology named memristor, for having
the potential of becoming the new electronic device standard. Yet, its manifestation as the …
the potential of becoming the new electronic device standard. Yet, its manifestation as the …
Resistive switching in microscale anodic titanium dioxide-based memristors
The potentiality of anodic TiO 2 as an oxide material for the realization of resistive switching
memory cells has been explored in this paper. Cu/anodic-TiO 2/Ti memristors of different …
memory cells has been explored in this paper. Cu/anodic-TiO 2/Ti memristors of different …
[PDF][PDF] Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices
R Muenstermann, T Menke, R Dittmann, R Waser - Adv. Mater, 2010 - academia.edu
Resistance random access memory, short RRAM, which employs two or more resistive
states of a material for data storage, has attracted considerable attention as a highly …
states of a material for data storage, has attracted considerable attention as a highly …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
Metal oxide resistive switching memory: materials, properties and switching mechanisms
With the continuously changing landscape of the computer technologies, a new memory
type is needed that will be fast, energy efficient and long-lasting. It shall combine the speed …
type is needed that will be fast, energy efficient and long-lasting. It shall combine the speed …
A Low‐Current and Analog Memristor with Ru as Mobile Species
The switching parameters and device performance of memristors are predominately
determined by their mobile species and matrix materials. Devices with oxygen or oxygen …
determined by their mobile species and matrix materials. Devices with oxygen or oxygen …
Ferroelectric tunnel memristor
Strong interest in resistive switching phenomena is driven by a possibility to develop
electronic devices with novel functional properties not available in conventional systems …
electronic devices with novel functional properties not available in conventional systems …
The switching location of a bipolar memristor: chemical, thermal and structural mapping
Memristors are memory resistors promising a rapid integration into future memory
technologies. However, progress is still critically limited by a lack of understanding of the …
technologies. However, progress is still critically limited by a lack of understanding of the …