A tunable ultra low power inductorless low noise amplifier exploiting body biasing of 28 nm FDSOI technology

J Zaini, F Hameau, T Taris, D Morche… - 2017 IEEE/ACM …, 2017 - ieeexplore.ieee.org
This paper presents the design of an Ultra Low Power (ULP) inductorless Low Noise
Amplifier (LNA) based on a Common Gate (CG) architecture using the back gate control of …
被引用次数：19 相关文章

A 0.03-3GHz Inductorless Wideband Low Noise Amplifier in 65nm CMOS

H Deng, H Feng, N Zhang - 2020 IEEE 3rd International …, 2020 - ieeexplore.ieee.org
An inductorless wideband Low Noise Amplifier (LNA) supporting multiple wireless
communication standards from 0.03 GHz to 3GHz is presented in this paper. It adopts …
被引用次数：4 相关文章

A 0.5-5.6 GHz inductorless wideband LNA with local active feedback

H Zhang, X Yan, J Shi, T Lu, J Yang… - 2018 IEEE 3rd …, 2018 - ieeexplore.ieee.org
In this paper, a wideband low noise amplifier (LNA) with local active feedback is proposed.
The proposed LNA exploits a differential common-source stage with current-reuse technique …
被引用次数：11 相关文章
[PDF] ieee.org

Inductorless multi-mode RF-CMOS low noise amplifier dedicated to ultra low power applications

T Taris, J Desevedavy, F Hameau, P Audebert… - IEEE …, 2021 - ieeexplore.ieee.org
This work presents and analyses the design of a multi-mode Low Noise Amplifier (LNA)
dedicated to 2.4 GHz Wireless Sensor Network (WSN) applications. The proposed …
被引用次数：17 相关文章 所有 4 个版本

A 3dB NF 0.1–6.6 GHz inductorless wideband low-noise amplifier in 0.13 µm CMOS

SAW Marzouk, FA Hussien… - 2014 IEEE 57th …, 2014 - ieeexplore.ieee.org
An inductorless wideband LNA is designed with low NF and high linearity. It is based on the
use of both passive and active feedback with current reuse techniques to achieve the …
被引用次数：6 相关文章 所有 2 个版本

A low-power triple-loop feedback broadband LNA in a 130 nm SiGe BiCMOS technology

B Sene, V Issakov - 2018 IEEE BiCMOS and Compound …, 2018 - ieeexplore.ieee.org
In this paper a low-power Low Noise Amplifier (LNA) with ultra broad bandwidth is
presented. We propose a novel circuit-level technique using a triple feedback loop to …
被引用次数：4 相关文章

Low-power low-noise amplifier IIP3 improvement under consideration of the cascode stage

C Chang, M Onabajo - 2017 IEEE International Symposium on …, 2017 - ieeexplore.ieee.org
This paper presents a linearity analysis to give insights into the impact of the cascode stage
in a common-source low-noise amplifier (LNA) that is designed with subthreshold biasing …
被引用次数：5 相关文章

A 1.3 mW 20dB gain low power inductorless LNA with 4dB Noise Figure for 2.45 GHz ISM band

F Belmas, F Hameau… - 2011 IEEE radio frequency …, 2011 - ieeexplore.ieee.org
This paper presents an inductorless low power (LP) low noise amplifier (LNA) based on a
Common Gate (CG) topology. The circuit combines gain boosting techniques to enable high …
被引用次数：29 相关文章 所有 7 个版本
[PDF] uclouvain.be

A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-SOI with Back-Gate Bias Tunability

L Nyssens, M Rack, S Wane, C Schwan… - 2022 17th European …, 2022 - ieeexplore.ieee.org
This paper presents a 2-stage low-noise amplifier (LNA) designed in 22 nm fully-depleted
silicon-on-insulator (FD-SOI) technology, covering the N259 and N260 millimeter-wave 5G …
被引用次数：2 相关文章 所有 3 个版本

An inductorless noise-cancelling CMOS LNA using wideband linearization technique

B Guo, J Chen, H Chen, X Wang… - 2017 IEEE 12th …, 2017 - ieeexplore.ieee.org
An inductorless noise-cancelling CMOS low-noise amplifier (LNA) with wideband
linearization technique is proposed. The complementary configuration by stacked …
被引用次数：6 相关文章