Etching of oxygen-based plasmas with sulfur dioxide (SO 2) or carbonyl sulfide (OCS) can
form high-aspect-ratio (HAR) features of amorphous carbon films as carbon hard masks …

Carbonyl sulfide (COS) was added to oxygen as the additive etch gas for etching of
amorphous carbon layers (ACL), and its effect on the etching characteristics of ACLs as the …

The sp2-rich hydrogenated amorphous carbon (aC: H) is widely adopted as hard masks in
semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp2 …

Amorphous carbon is used as a hard mask for dielectric etching with a high aspect ratio in
the fabrication processes of semiconductor devices. The dependence of the etching …

We have studied both the etching of SiO 2 film and the growth of an amorphous fluorinated
carbon (aC: F) film by mass-analyzed fluorocarbon ion irradiation. This experiment was …

In situ multiple internal reflection Fourier transform infrared spectroscopy and spectroscopic
ellipsometry are used to study the surfaces of Si and SiO 2 films during etching with CF 4/H 2 …

During the etching of the film of silicon dioxide in an Ar-diluted octafluoro cyclobutane (cC 4
F 8) plasma, infrared spectra were obtained every half a second by using in situ time …

A remote microscale atmospheric pressure plasma jet with a He/O 2 gas mixture is used to
etch a hydrogenated amorphous carbon layer. The etched profiles are measured by means …

In this study, we compared the line edge roughnesses (LER) and profile angles of chemical
vapor deposited (CVD) amorphous carbon (aC) patterns etched in an inductively coupled …

The etch rates of BCB film in a reactive ion etcher (RIE) were measured using Ar, O2, O2+
CF4, and O2+ SF6 gas mixtures. Faster etch rates were obtained when CF4 and SF6 were …