Recently, 2D layered materials like graphitic carbon nitride (gC 3 N 4) are gaining significant
attention due to their excellent structural and electronic properties. Metal oxide and gC 3 N 4 …

Recently, 2D layered materials like graphitic carbon nitride (g-C3N4) are gaining significant
attention due to their excellent structural and electronic properties. We report the synthesis of …

The resistance change of an insulator or semiconductor under applied current or voltage is
defined as resistive switching effect, which is a significative physical performance in the …

Resistive random-access memory (RRAM) is the most promising research direction of the
next generation non-volatile memory (NVM) devices, and seeking novel materials as the …

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene
nanosheet and presents unusual physicochemical properties due to the s-triazine …

Titanium dioxide memristors are promising next generation devices for neuromorphic
computing, which can mimic synapses of human brain. With respect to meet satisfactory …

Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO)
embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured …

An in situ protocol is described for the preparation of carbon nitride (CN)-supported nickel
oxide nanoparticles using a high-temperature route. The microscopic characterization has …

The uniform and stable bipolar switching characteristics of Graphene Oxide (GO) based
metal insulator metal (MIM) structure embedded with titanium dioxide (TiO 2) nanoparticles …

The searching for new memory that can work under harsh conditions will be significant for
their application in some important fields such as geothermal, oil and aerospace industries …