The growth conditions of In 1-x Ga x As 1-y P y, layers on GaAs (111) B substrate and the
photoluminescence (PL) properties of these layers are described. The temperature …

An LPE growth method of In 1-x Ga x P y As 1-y layers on (1, 0, 0) GaAs is described over a
wide range of band-gap energy. Melt compositions for lattice-matched growth of these layers …

Abstract Lattice-matched In 1-x Ga x P 1-y As y epitaxial layers with a small atomic fraction of
As have been grown on (100) GaAs substrates by the supercooling LPE method using a …

Abstract Lattice-matched In 1-x Ga x As z P 1-z epitaxial layers with various compositions
(0.72≦ x≦ 0.89, 0.03≦ z≦ 0.37) have been grown on VPE (100) GaAs 1-y P y (y\cong0 …

Abstract In x Ga 1-x As (x≈ 0.53) epitaxial layers are grown on the (100) surface of InP
substrates by molecular beam epitaxy. By regulating the relative ratio of the In and Ga …

Liquid phase epitaxial (LPE) growth of In 1-x Ga x As 1-y P y crystals lattice matched to InP
was studied systematically with a controlled amount of supersaturation for whole range of …

LPE growth of Ge-doped InGaAsP/InP by two-phase solution technique - ScienceDirect Skip to
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High quality In, Ga,„As films (x< 0.18) were prepared on GaAs substrates by molecular beam
epitaxy (MBE). An electron mobility of 4100 cm"/V sec (n= 1.7 x 10" cmT*) was obtained in a …

Lattice matched InGaAsP mixed crystals with various energy bandgaps were grown by liquid
phase epitaxy (LPE) on GaAs 1-y P y substrates (y= 0.31 and 0.39). The growth layers had …

Abstract In 1-x Ga x As y P 1-y (0.5≤ x≤ 0.9, 0≤ y≤ 0.55) layers have been grown on GaAs
substrates by low-pressure organometallic vapor phase epitaxy using triethylindium (TEIn) …