Abstract InGaAs/Ge complementary FinFET technology has been considered as an
alternative channel material for CMOS technology, useful for next-generation digital VLSI …

The characteristics and mechanism of single-event transients in silicon-on-insulator (SOI) fin
field-effect transistors (FinFETs) were analyzed using Sentaurus technology computer-aided …

The III-V/Ge complementary-FinFET (C-FinFET) based integrated circuits are more
susceptible to radiation-induced single event transients (SET) than silicon counterparts. In …

The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues
affecting the reliability of modern electronic systems in space and terrestrial applications …

In the present work, various 10 nm FD-SOI FinFET structures utilizing promising design
elements like raised source and drain extensions, hybrid air spacer, and interfacial silicide …

Abstract Using Technology Computer-Aided Design (TCAD) 3-D simulation, the single event
effect (SEE) of 25 nm raised source-drain FinFET is studied. Based on the calibrated 3-D …

During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors
(MOSFET) technology to obtain the adequate gate control above the channel, FinFET …

Operating circuits in the near/sub-threshold regime can lower the circuit energy consumption
at the expense of lowering the circuit speed. In addition near/sub-threshold can result in …

In this paper, a physics-based bias-dependent model of single-event transients (SETs) in
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …

The paper presents details of our physics-based three-dimensional (3D) device modeling
coupled in mixed-mode with external load circuit and parasitics, which enabled accurate …