Structural and optical studies of GaAs1-xBix and p-Bi203 for optoelectronic devices
J Steele - 2015 - ro.uow.edu.au
In this thesis, the optical and structural properties of molecular beam epitaxy (MBE) grown
dilute GaAs1− xBix/GaAs (001)-and (113) B-oriented heterostructures and the laser-induced …
dilute GaAs1− xBix/GaAs (001)-and (113) B-oriented heterostructures and the laser-induced …
Raman scattering studies of strain effects in (100) and (311) B GaAs1− xBix epitaxial layers
We report room-temperature Raman studies of strained (100) and (311) B GaAs 1− x Bi x
epitaxial layers for x≤ 0.039. The Raman spectra exhibit a two-mode behavior, as well as …
epitaxial layers for x≤ 0.039. The Raman spectra exhibit a two-mode behavior, as well as …
Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys
In this paper, we present results obtained by an optical technique, namely, reflectance
anisotropy spectroscopy (RAS), applied to a series of GaAs 1− x Bi x samples grown by …
anisotropy spectroscopy (RAS), applied to a series of GaAs 1− x Bi x samples grown by …
[HTML][HTML] GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation
We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-
coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally …
coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally …
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
We report room-temperature Raman scattering studies of nominally undoped (100)
GaAs_1− xBix epitaxial layers exhibiting Bi-induced (p-type) longitudinal-optical-plasmon …
GaAs_1− xBix epitaxial layers exhibiting Bi-induced (p-type) longitudinal-optical-plasmon …
Raman and AFM studies on nominally undoped, p-and n-type GaAsBi alloys
We study structural properties and surface formation of undoped, n-and p-type doped
GaAsBi alloys with various bismuth compositions using Micro-Raman, Fourier Transform …
GaAsBi alloys with various bismuth compositions using Micro-Raman, Fourier Transform …
Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates
M Haines, T Kerr, S Newstead, PB Kirby - Journal of applied physics, 1989 - pubs.aip.org
The optic phonons of Ga1− x Al x Sb layers with 0≤ x≤ 1 grown by molecular‐beam epitaxy
on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon …
on GaAs and GaSb substrates have been studied using Raman spectroscopy. The phonon …
Electronic properties of GaAsBi (001) alloys at low Bi content
J Honolka, C Hogan, M Vondráček, Y Polyak… - Physical Review …, 2019 - APS
We present an in-depth investigation of structural and electronic properties of GaAsBi
epilayers. High (001) crystalline order is achieved using careful molecular beam epitaxy and …
epilayers. High (001) crystalline order is achieved using careful molecular beam epitaxy and …
Optical properties of GaAs1− xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311) B GaAs substrates
In this work, the electronic bandstructure of GaAs 1− x Bi x/GaAs single quantum well (QW)
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
Investigation of structural, electrical and optical properties of doped dilute GaAsBi grown by molecular beam epitaxy
S Alhassan - 2022 - eprints.nottingham.ac.uk
This thesis reports an investigation of the strutural, electrical and optical properties of dilute
bimuth (Bi) containing semiconductors materials, namely GaAsBi grown by Molecular Beam …
bimuth (Bi) containing semiconductors materials, namely GaAsBi grown by Molecular Beam …