The structural and optical properties of high temperature-annealed superlattices of GaN
quantum dots embedded in AlN barrier have been studied by a combination of X-ray …

The influence of the post‐growth thermal annealing on the structural and optical properties
of GaN/AlN quantum dots (QDs) is reported. X‐ray techniques suggest smooth and high …

We have investigated the optical properties of self‐assembled cubic GaN quantum dots
(QDs) in a cubic AlN matrix grown in Stranski–Krastanov growth mode. Two different sample …

The localization of carrier states in GaN/AlN self-assembled quantum dots (QDs) is studied
by correlative multimicroscopy relying on microphotoluminescence, electron tomography …

We report on the effect of vertical correlation on GaN/AlN quantum dots grown by plasma-
assisted molecular-beam epitaxy using the modified Stranski–Krastanow growth mode …

Capping of GaN quantum dots with AlN has been studied at the monolayer scale by
combining atomic force microscopy, high resolution electron microscopy, and grazing …

GaN/AlN heterostructures grown by molecular beam epitaxy are studied by high-resolution
transmission electron microscopy (HRTEM). The two-dimensional/three-dimensional …

Local investigations using high-angle annular-dark-field imaging combined with electron
low-energy-loss spectroscopy were performed to closely characterize the GaN/Al 0.5 Ga 0.5 …

The authors have studied the excitation-dependent optical properties of GaN/AlN self-
assembled quantum dots (QDs) grown on Si (111) substrates. Ensembles of QDs were …

GaN/AlN quantum dots grown by molecular beam epitaxy either on silicon (111), sapphire or
6H–SiC (0001) substrate have been investigated using photoluminescence …