Mapping Charge Recombination and the Effect of Point-Defect Insertion in Nanowire Heterojunctions
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
locating electronic point defects in bulk semiconductors has previously been impossible …
locating electronic point defects in bulk semiconductors has previously been impossible …
Mapping charge recombination and the effect of point defect insertion in gallium arsenide nanowire heterojunctions
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
locating electronic point defects in bulk semiconductors has previously been impossible …
locating electronic point defects in bulk semiconductors has previously been impossible …
Geometric effects on carrier collection in core–shell nanowire p–n junctions
We report electron-beam-induced current (EBIC) microscopy carried out on free-standing
GaAs nanowire core–shell, p–n tunnel junctions. The carrier kinetics in both the n-type core …
GaAs nanowire core–shell, p–n tunnel junctions. The carrier kinetics in both the n-type core …
Direct observation of single-charge-detection capability of nanowire field-effect transistors
J Salfi, IG Savelyev, M Blumin, SV Nair… - Nature …, 2010 - nature.com
A single localized charge can quench the luminescence of a semiconductor nanowire, but
relatively little is known about the effect of single charges on the conductance of the …
relatively little is known about the effect of single charges on the conductance of the …
[图书][B] Imaging Electrically-Active Defects in Gallium Arsenide and Cobalt Nanowire Devices
B Zutter - 2021 - search.proquest.com
Nanostructured materials are of critical importance in modern electronic devices.
Semiconducting channels of sub-10~ nm critical dimension are the primary active …
Semiconducting channels of sub-10~ nm critical dimension are the primary active …
Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core–shell nanowires
We demonstrate spatial probing of carrier transport within GaAs/AlGaAs core–shell
nanowires with nanometer lateral resolution and subsurface sensitivity by energy-variable …
nanowires with nanometer lateral resolution and subsurface sensitivity by energy-variable …
Electrical and optical characterization of surface passivation in GaAs nanowires
We report a systematic study of carrier dynamics in Al x Ga1–x As-passivated GaAs
nanowires. With passivation, the minority carrier diffusion length (L diff) increases from 30 to …
nanowires. With passivation, the minority carrier diffusion length (L diff) increases from 30 to …
Fingerprinting electronic structure in nanomaterials: A methodology illustrated by ZnSe nanowires
D Wisniewski, K Byrne, C Fernandes, C Stewart… - Nano Letters, 2019 - ACS Publications
Characterizing point defects that produce deep states in nanostructures is imperative when
designing next-generation electronic and optoelectronic devices. Light emission and carrier …
designing next-generation electronic and optoelectronic devices. Light emission and carrier …
Surface-mediated electrical transport in single GaAs nanowires
III-V semiconductor compound based nanowires (NWs) are expected to impact the fields of
nano-electronic, nano-photonic, and photovoltaic devices. Self-assembly of crystal-phase …
nano-electronic, nano-photonic, and photovoltaic devices. Self-assembly of crystal-phase …
[引用][C] Visualization of carrier depletion in semiconducting nanowires
O Hayden, G Zheng, P Agarwal, CM Lieber - Small, 2007 - Wiley Online Library
Semiconducting nanowires (NWs)[1] grown by the vapour–liquid–solid (VLS) mechanism
are attractive building blocks for nanoscale devices. A central question in the study of such …
are attractive building blocks for nanoscale devices. A central question in the study of such …