Discrete silicon carbide (SiC) power devices have unique characteristics that outpace those
of silicon (Si) counterparts. The improved physical features have provided better faster …

Several high-voltage silicon carbide (SiC) devices have been demonstrated over the past
few years, and the latest-generation devices are showing even faster switching, and greater …

The objective of this thesis is to assess the challenges associated with driving Silicon
Carbide (SiC) power devices, and to compare the potential gate drive methods for these …

Due to their low switching energies, knee-less forward characteristics, and a robust, low
reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in …

This paper presents a comprehensive evaluation and experimental comparison of silicon
carbide power MOSFETs through double pulse test. First, a universal hardware platform is …

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace
those of standard silicon (Si) parts. The improved physical characteristics allow for faster …

Compared with traditional silicon devices, silicon carbide (SiC) device has outstanding
advantages in high frequency, high voltage and high temperature applications. At present …

Silicon carbide (SiC) is a wide bandgap semiconductor with a very high breakdown field and
an excellent high temperature stability. SiC can also be thermally oxidized to form device …

In this work, the first reported integrated silicon carbide (SiC) CMOS gate driver is presented.
The gate driver is designed in a 15V, 1.2 μm silicon carbide CMOS process, and simulated …

Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …