Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs
because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with …

Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs
because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with …

Conventional Si CMOS intrinsic device performance has improved by 17% per year over the
last 30 years through scaling of the gate length of the MOSFET along with process …

Superior hole-mobility and compatibility with mainstream Si processing technology make
strained SiGe an attractive channel material for p-MOSFET. In this paper, the electrical …

With a unified physics-based model linking MOSFET performance to carrier mobility and
drive current, it is shown that nearly continuous carrier mobility increase has been achieved …

Dramatic hole mobility enhancement of 4-25X has been demonstrated in compressively
strained Ge p-channel MOSFETs–the highest mobility enhancement for hole carriers among …

Recent progress in the computer simulation of strained SiGe channel p-MOSFET
performance is reviewed. The electrical characteristics of strained SiGe channel p-MOSFET …

Strained Si/SiGe heterostructure MOS transistors offer great promise for nanoscale CMOS
technology. This paper reviews these high performance devices and the challenges …

The enhanced electrical performance of dual quantum well strained Si/SiGe n-channel
MOSFETs has been investigated as a function of SiGe material quality. The higher electron …

Performance enhancement using conventional stress elements such as stress liners or
embedded source/drain is significantly challenged at extremely tight gate pitch, required for …