The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic
chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon …

Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was
investigated by theoretical calculation and experiment. Through solving Schrodinger and …

The unintentionally doped samples of Al 0.22 Ga 0.78 N/GaN/Al 0.22 Ga 0.78 N/GaN multi-
heterostructures have been designed and fabricated. The polarization induced charge and …

The energy band diagram and charge distribution of the unintentional doped
AlGaN/GaN/AlGaN/GaN double heterostructure were obtained by self-consistent Poisson …

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined
from temperature-dependent Hall effect measurements and also from Infrared (IR) …

Abstract Undoped and Si doped AlGaN/GaN heterostructures have been investigated in
reflectance (R) and photoreflectance (PR) spectroscopies. In the case of R spectra, features …

Raman scattering from an AlGaN/GaN heterostructure was performed in the temperature
range from 77 to 773 K. The first-and second-order Raman scattering of the A 1 longitudinal …

A fast and non-destructive method for probing the true signatures of 2D electron gas (2DEG)
states in AlGaN/GaN heterostructures is presented. Two broad features superimposed with …

Temperature dependent Hall effect measurements were carried out on AlGaN/GaN
heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition …

AlGaN surface potentials in AlGaN/GaN heterostructures with and without SiN passivation
were investigated using x‐ray photoelectron spectroscopy (XPS). SiN films were formed on …