Abstract Novel InAs/InGaAs quantum dots-in-a-well (DWELL) infrared photodetectors are
reviewed. These detectors, in which the active region consists of InAs quantum dots (QDs) …

We report a high detectivity middle-wavelength infrared quantum dot infrared photodetector
(QDIP). The InGaAs quantum dots were grown by self-assembly on an InGaP matrix via low …

Quantum dot infrared photodetectors (QDIPs) have emerged as attractive devices for
sensing long wavelength radiation. Their principle of operation is based on intersublevel …

In the past decade, there has been active research on infrared detectors based on
intersubband transitions in self-assembled quantum dots (QDs). In the past two years, at …

We report a high detectivity of 31011 cm Hz1/2/W at 78 K for normal-incidence quantum dot
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …

We report a high-detectivity InAs quantum-dot infrared photodetector. The InAs quantum
dots were grown by self-assembly on InP substrates via low-pressure metal–organic …

We report the device performance of normal-incidence (In, Ga) As/GaAs quantum dot
intersubband infrared photodetectors. A primary intersubband transition peak is observed at …

A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum
dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for …

We present a study of a series of nin InAs quantum-dot infrared photodetectors (QDIPs) with
unintentionally doped active regions. Different quantum-dot capping layer materials (GaAs …

We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum
dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared …