Growth of GaAs nanowires on Si substrates using a molecular beam epitaxy
SG Ihn, JI Song, YH Kim, JY Lee… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth
method using a molecular beam epitaxy (MBE). The MBE growth could produce controlled …
method using a molecular beam epitaxy (MBE). The MBE growth could produce controlled …
GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy
SG Ihn, JI Song, YH Kim, JY Lee - Applied physics letters, 2006 - pubs.aip.org
High-quality Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-
solid growth in a solid source molecular beam epitaxy system. X-ray diffraction, scanning …
solid growth in a solid source molecular beam epitaxy system. X-ray diffraction, scanning …
Morphology-and orientation-controlled gallium arsenide nanowires on silicon substrates
GaAs nanowires were epitaxially grown on Si (001) and Si (111) substrates by using Au-
catalyzed vapor− liquid− solid (VLS) growth in a solid source molecular beam epitaxy …
catalyzed vapor− liquid− solid (VLS) growth in a solid source molecular beam epitaxy …
InGaAs/GaAs core–shell nanowires grown by molecular beam epitaxy
Au-catalyzed In x Ga 1-x As nanowires (NWs) and In x Ga 1-x As/GaAs core-shell NWs were
grown by molecular beam epitaxy on (1 1 1) B GaAs. The effects of In content, growth …
grown by molecular beam epitaxy on (1 1 1) B GaAs. The effects of In content, growth …
Fabrication and characterization of freestanding GaAs∕ AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase …
J Noborisaka, J Motohisa, S Hara, T Fukui - Applied Physics Letters, 2005 - pubs.aip.org
We fabricated Ga As∕ Al Ga As core-shell nanowires by using selective-area metalorganic
vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked …
vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked …
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was
investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs …
investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs …
Nucleation and growth of Au-assisted GaAs nanowires on GaAs (1 1 1) B and Si (1 1 1) in comparison
The nucleation and growth of GaAs nanowires fabricated by molecular beam epitaxy (MBE)
following the Au-assisted vapor-liquid-solid mechanism were compared on GaAs (111) B …
following the Au-assisted vapor-liquid-solid mechanism were compared on GaAs (111) B …
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth
JC Harmand, G Patriarche, N Péré-Laperne… - Applied Physics …, 2005 - pubs.aip.org
GaAs nanowires were grown by molecular-beam epitaxy on (111) B oriented surfaces, after
the deposition of Au nanoparticles. Different growth durations and different growth …
the deposition of Au nanoparticles. Different growth durations and different growth …
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires
We report on structural and electrical properties of GaAs nanowires (NWs) grown by
molecular beam epitaxy (MBE) on GaAs and SiO2 substrates using Au as growth catalyst …
molecular beam epitaxy (MBE) on GaAs and SiO2 substrates using Au as growth catalyst …
Comparison of Be-doped GaAs nanowires grown by Au-and Ga-assisted molecular beam epitaxy
DL Dheeraj, AM Munshi, OM Christoffersen… - Journal of crystal …, 2013 - Elsevier
We report on the growth, structural and electrical characterizations of Be-doped GaAs
nanowires (NWs) grown by the Au-and Ga-assisted vapour–liquid–solid techniques using …
nanowires (NWs) grown by the Au-and Ga-assisted vapour–liquid–solid techniques using …