This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the
semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric …

Damage incurred during plasma processing, leading to increases in dielectric constant k, is
a persistent problem with porous ultra-low-k dielectric films, such as SiCOH. Although most …

The degradation of porous low-k materials, like SiOCH, under plasma processing continues
to be a problem in the next generation of integrated-circuit fabrication. Due to the exposure …

Ultraviolet-assisted curing (UV curing) has been applied recently to enhance the mechanical
properties of low-films. Knowledge about which UV energies are most effective is still limited …

One important class of low-k materials used as interconnect dielectrics employs methyl
groups added to nanoporous SiO 2 matrices. These carbon-doped oxide materials are …

Modification of ultra-low-k films by extreme ultraviolet (EUV) and vacuum ultraviolet (VUV)
emission with 13.5, 58.4, 106, 147 and 193 nm wavelengths and fluences up to 6× 10 18 …

Low-dielectric constant SiOC (H) films were deposited on p-type Si (100) substrates by
plasma-enhanced chemical-vapor deposition (PECVD) using dimethyldimethoxy silane …

Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and
ab initio density functional theory-based molecular dynamics simulations demonstrate …

Plasma is extensively used for the etching/ashing of low-dielectric (low-k⁠) films. However,
since low-k films, such as SiOC films, are vulnerable to plasma irradiation, they are severely …