Enhanced performance of in (Ga) as QD based optoelectronic devices through improved interface quality between QD and matrix material
The interface quality in InAs/GaAs and In0. 5Ga0. 5As/GaAs quantum dot (QD)
heterostructures are elucidated through the phonon‐assisted vibrational modes and is found …
heterostructures are elucidated through the phonon‐assisted vibrational modes and is found …
Subsiding strain-induced In-Ga intermixing in InAs/InxGa1− xAs sub-monolayer quantum dots for room temperature photodetectors
Strain–induced intermixing in sub–monolayer (SML) quantum dots (QDs) affects primarily
the dot size distribution in an erratic way and also the inter–dot coupling efficiency for carrier …
the dot size distribution in an erratic way and also the inter–dot coupling efficiency for carrier …
Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots
We report, for the first time, 10-layer InAs/GaAsN/GaAs quantum dots (QDs) by varying the
GaAs layer thickness and investigate their optical properties. Due to propagation of strain …
GaAs layer thickness and investigate their optical properties. Due to propagation of strain …
Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
CK Chia, SJ Chua, YJ Wang, AM Yong, SY Chow - Thin solid films, 2007 - Elsevier
Two types of InAs quantum dot (QD) structure, grown by molecular-beam epitaxy on GaAs
(100) substrates, one with dot-in-a-In0. 12Ga0. 88As quantum well (QW) and another one …
(100) substrates, one with dot-in-a-In0. 12Ga0. 88As quantum well (QW) and another one …
Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures
A Rimkus, E Pozingytė, R Nedzinskas… - Optical and Quantum …, 2016 - Springer
Optical transitions and electronic properties of epitaxial InAs quantum dots (QDs) grown with
and without InGaAs strain-relieving capping layer within GaAs/AlAs quantum well (QW) are …
and without InGaAs strain-relieving capping layer within GaAs/AlAs quantum well (QW) are …
Carrier dynamics of strain-engineered InAs quantum dots with (In) GaAs surrounding material
The present study reports on the optical properties of epitaxially grown InAs quantum dots
(QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in …
(QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in …
Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In) GaAs surrounding …
O Nasr, MHH Alouane, H Maaref, F Hassen… - Journal of …, 2014 - Elsevier
In this paper, we report on the impact of InAs quantum dots'(QDs) position within InGaAs
strain reducing layer on their structural and optical properties. Morphological investigation …
strain reducing layer on their structural and optical properties. Morphological investigation …
Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures
In this study, we have discussed the effect of strain distribution and optical properties on In
0.14 Ga 0.86 As matrix thickness variation (t mat) in self-assembled InAs quantum dot (QD) …
0.14 Ga 0.86 As matrix thickness variation (t mat) in self-assembled InAs quantum dot (QD) …
Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage
Abstract Strain-coupled multilayer Quantum Dot (QD) structures draw a great attention these
days because of their superior optical and device performance. However, these coupled …
days because of their superior optical and device performance. However, these coupled …
Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven
process due to the lattice mismatch of the InAs/GaAs system. We have investigated strain …
process due to the lattice mismatch of the InAs/GaAs system. We have investigated strain …