Self-assembled quantum-dot superluminescent light-emitting diodes

ZY Zhang, RA Hogg, XQ Lv, ZG Wang - Advances in Optics and …, 2010 - opg.optica.org
The development of low-cost, compact, high-power and broadband superluminescent light-
emitting diodes is an important research subject for a wide range of applications. We …

Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

ZY Zhang, RA Hogg, B Xu, P Jin, ZG Wang - Optics letters, 2008 - opg.optica.org
The first demonstration, to our knowledge, of the creation of ultrabroadband
superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid …

High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

ZY Zhang, RA Hogg, P Jin, TL Choi… - IEEE Photonics …, 2008 - ieeexplore.ieee.org
High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are
realized by using a combination of self-assembled QDs with a high density, large …

Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

SK Ray, KM Groom, MD Beattie, HY Liu… - IEEE photonics …, 2005 - ieeexplore.ieee.org
We propose and demonstrate a technique for tailoring the emission bandwidth of/spl sim/1.3
μm quantum dot superluminescent light-emitting diodes. A broadening of the emission is …

Superluminescent diodes using quantum dots superlattice

CE Dimas, HS Djie, BS Ooi - Journal of crystal growth, 2006 - Elsevier
We report a broadband superluminescence diode using InGaAs/GaAs self-assembled
quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD …

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

S Haffouz, S Raymond, ZG Lu, PJ Barrios… - Journal of crystal …, 2009 - Elsevier
Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots
(QDs), where the dots height was deliberately varied from one layer to another have been …

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

S Haffouz, PJ Barrios, R Normandin, D Poitras, Z Lu - Optics letters, 2012 - opg.optica.org
An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple
layers of dots of tuned height is reported. Due to thermal effect, the superluminescent …

High-performance quantum-dot superluminescent diodes

ZY Zhang, ZG Wang, B Xu, P Jin… - IEEE Photonics …, 2004 - ieeexplore.ieee.org
By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot
(SAQD) laser diode structure of 6/spl deg/with respect to the facets, high-power and broad …

Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

LH Li, M Rossetti, A Fiore, L Occhi, C Velez - Electronics letters, 2005 - research.tue.nl
Wide emission spectrum from superluminescent diodes with chirped quantum dot
multilayers - Electronics Letters Page 1 Wide emission spectrum from superluminescent …

1.3-m Quantum-Dot Multisection Superluminescent Diodes With Extremely Broad Bandwidth

YC Xin, A Martinez, T Saiz, AJ Moscho… - IEEE Photonics …, 2007 - ieeexplore.ieee.org
1.3- m Quantum-Dot Multisection Superluminescent Diodes With Extremely Broad Bandwidth
Page 1 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 7, APRIL 1, 2007 501 1.3 …