Machine Learning-based model for Single Event Upset Current Prediction in 14nm FinFETs
This work presents a machine learning regression-based surrogate model of Single Event
Upset (SEU) transient current for circuit-level simulation. The phenomenal success of …
Upset (SEU) transient current for circuit-level simulation. The phenomenal success of …
Prediction of Single Event Effects in FinFET Devices Based on Deep Learning
H Liu, S Wang, R Zhao, H Ma, L Ma… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues
affecting the reliability of modern electronic systems in space and terrestrial applications …
affecting the reliability of modern electronic systems in space and terrestrial applications …
Machine learning regression-based single-event transient modeling method for circuit-level simulation
C Xu, Y Liu, X Liao, J Cheng… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, a novel machine learning regression-based single-event transient (SET)
modeling method is proposed. The proposed method can obtain a reasonable and accurate …
modeling method is proposed. The proposed method can obtain a reasonable and accurate …
Single event effects prediction of MOSFET device using deep learning
R Zhao, S Wang, X Duan, X Cao, L Ma, S Chen… - …, 2022 - iopscience.iop.org
Single event effect (SEE) is an important problem in the reliability research of integrated
circuits. The study of SEE of traditional MOSFET devices is mainly based on simulation …
circuits. The study of SEE of traditional MOSFET devices is mainly based on simulation …
An efficient semi-analytical current source model for FinFET devices in near/sub-threshold regime considering multiple input switching and stack effect
Nanoscale FinFET devices are emerging as the transistor of choice in 32nm CMOS
technologies and beyond. This is due to their more effective channel control, higher ON/OFF …
technologies and beyond. This is due to their more effective channel control, higher ON/OFF …
Semi-analytical current source modeling of FinFET devices operating in near/sub-threshold regime with independent gate control and considering process variation
Operating circuits in the near/sub-threshold regime can lower the circuit energy consumption
at the expense of lowering the circuit speed. In addition near/sub-threshold can result in …
at the expense of lowering the circuit speed. In addition near/sub-threshold can result in …
Model-Based Analysis of Single-Event Upset (SEU) Vulnerability of 6T SRAM Using FinFET Technologies
SA Olowogemo, H Qiu, BT Lin… - … on Defect and Fault …, 2022 - ieeexplore.ieee.org
The modeling process, when validated with the experimental data, can be used for
additional analysis of similar technologies without the expense of laser beam or heavy ion …
additional analysis of similar technologies without the expense of laser beam or heavy ion …
Predictive technology model for nano-CMOS design exploration
A predictive MOSFET model is critical for early circuit design research. In this work, a new
generation of Predictive Technology Model (PTM) is developed, covering emerging physical …
generation of Predictive Technology Model (PTM) is developed, covering emerging physical …
Fast dynamic IR-drop prediction using machine learning in bulk FinFET technologies
P Huang, C Ma, Z Wu - Symmetry, 2021 - mdpi.com
IR-drop is a fundamental constraint by almost all integrated circuits (ICs) physical designs,
and many iterations of timing engineer change order (ECO), IR-drop ECO, or other ECO are …
and many iterations of timing engineer change order (ECO), IR-drop ECO, or other ECO are …
A TCAD Augmented Machine Learning Based Drain Current Model for InGaAs FinFETs
In this paper, we describe a framework for model development of InGaAs FinFET based on
machine learning. An artificial neural network is used to create the model, and TCAD …
machine learning. An artificial neural network is used to create the model, and TCAD …