Atomic-scale cellular model has been developed to simulate the feature profile evolution
during poly-Si gate etching in high-density Cl 2 and Cl 2∕ O 2 plasmas, with emphasis …

Atomic-or nanometer-scale surface roughening and rippling during Si etching in high-
density Cl 2 and Cl 2/O 2 plasmas have been investigated by developing a three …

Formation mechanisms for profile anomalies such as surface roughness and residue have
been investigated numerically and experimentally for Si etching in Cl2/O2 plasmas. The …

A phenomenological model has been developed to simulate the feature profile evolution of
polycrystalline silicon (poly-Si) gate etching in Cl 2/O 2 plasmas. The model takes into …

Plasma–surface interactions in Cl-and Br-based plasmas have been studied for advanced
front-end-of-line (FEOL) etching processes in nanoscale ULSI device fabrication. A Monte …

A Monte Carlo based profile simulator was constructed that incorporated the dominant
reaction mechanisms of surface chlorination under simultaneous neutral and ion …

Reactive ion etching (RIE) has been used in the manufacture of semiconductor integrated
circuit devices. However, the formation mechanisms of profile anomalies and microscopic …

In this article the major kinetics models for plasma-surface interactions were reviewed
highlighting their strengths and limitations. As a subset of reactive-site modeling, mixing …

A two-dimensional numerical fluid model was developed to investigate the effects of reactor
design on the radial profiles of plasma species, namely, etch products and positive ions …

A phenomenological model has been developed to simulate the feature profile evolution for
nanometer-scale control of the profile and critical dimension during plasma etching …