We directly image an InP p–n junction depletion region under both forward and reverse bias
using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique …

Scanning capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) are
used to image the electrical structure of a silicon pn junction under applied bias. With SCM …

A new technique for the two‐dimensional delineation of P‐N junctions is presented using a
scanning resistance microscope (SRM). The SRM uses a conducting probe to perform …

A new technique for the two‐dimensional delineation of P–N junctions is presented using a
scanning resistance microscope (SRM). The SRM uses a conducting probe to perform …

Quantitative evaluation of the dopant concentration across silicon p–n junctions has been
performed on oxide-passivated surfaces by using tunneling current mapping in the constant …

We report characterization of Si pn junction arrays using simultaneous conductance imaging
and constant current mode (topographical) scanning tunneling microscopy imaging over a …

Quantification of dopant profiles in two dimensions 2D for pn junctions has proven to be a
challenging problem. The scanning capacitance microscope SCM capability for pn junction …

Current imaging of cleaved two‐dimensional silicon pn junctions with an ultrahigh vacuum
scanning tunneling microscope is presented. In order to be able to distinguish between p …

A contactless measurement technique for electrical depth profiling of very shallow p‐n
junctions using a scanning Auger microscope is presented. The physical principle is the …

Electrical characterization of an operating pn-junction diode is performed with scanning
capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) with submicron …