We discuss a model for the onsite matrix elements of the sp 3 d 5 s∗ tight-binding
Hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model …

The deformation potentials of cubic semiconductors are reexamined from the point of view of
the extended-basis sp 3 d 5 s* tight-binding model. Previous parametrizations had failed to …

We model the phonon spectra of the diamond-structure compounds C, Si, Ge, Sn and the
zinc-blende-structure compounds GaP, GaAs, and ZnS. We use a four-parameter valence …

We present a pair of nonorthogonal tight-binding (TB) models for germanium within the NRL-
TB approach. One uses an sp 3 basis, and is optimized for total-energy calculations by fitting …

The electronic properties of strained Si 1− x Ge x alloys epitaxially grown on (001) Si 1− y
Ge y relaxed substrates for any x and y Ge concentrations are presented here. Our …

Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-
Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge …

The vibrational properties of Si-Ge systems are studied theoretically with ab initio
techniques. Full dispersion relations for pure silicon and germanium crystals under several …

The binding-energy separation between the Si 2p and Ge 3d core levels has been
measured on pseudomorphically strained heterojunctions consisting of Si on Ge (100) and …

We perform a thorough theoretical analysis of the band-offset problem at strained Si/Ge
interfaces. The difference between the two materials is small enough to warrant a linear …

A semiempirical tight-binding method was used to calculate the band structures of Si 1− x
Ge x alloys coherently grown on (001)-,(111)-, and (110)-oriented Si 1− y Ge y substrates …